CS24N50ANHD Datasheet, MOSFET, Huajing Microelectronics

Download (Size : 677.62KB)

CS24N50ANHD Features and benefits

l Fast Switching l Low ON Resistance(Rdson≤0.26Ω) l Low Gate Charge (Typical Data:96nC) l Low Reverse transfer capacitances(Typical:44pF) l 100% Single Pulse avalanche e.

CS24N50ANHD Application

Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rat.

CS24N50ANHD Description

CS24N50 ANHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 24 230 0.18 performance and enhance the avalanche ener.

Image gallery